- 您現在的位置：買賣IC網 > PDF目錄382965 > FP209 (Sanyo Electric Co.,Ltd.) NPN Epitaxial Planar Silicon Transistor Driver Applications PDF資料下載
參數資料
| 型號： | FP209 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor Driver Applications |
| 中文描述： | 瑞展硅晶體管驅動器應用 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 95K |
| 代理商： | FP209 |
52098HA (KT)/53094TH (KOTO) BX-0215 No.4536-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:EN4536
FP209
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2097A
[FP209]
Features
· Composite type with 2 transistors (NPN) contained
in one package, facilitating high-density mounting.
· The FP209 is formed with 2 chips being equivalent
to the 2SD1621, placed in one package.
Electrical Connection
Marking:209
C
Mounted on ceramic board (250mm
2
×
0.8mm) 1unit
Mounted on ceramic board (250mm
2
×
0.8mm)
C
Electrical Characteristics
at Ta=25C
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
SANYO:PCP5
(Bottom view)
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
(Top view)
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
e
s
r
m
a
B
E
-
e
C
-
e
C
V
V
O
O
B
E
C
C
0
5
3
2
V
V
e
g
a
e
g
a
V
t
(
t
e
s
a
B
e
C
e
C
t
e
C
D
r
e
C
s
D
l
T
n
o
n
u
J
e
g
a
S
-
m
r
e
C
r
e
C
e
s
a
B
E
V
O
B
E
IC
IP
C
IB
PC
PT
j
g
T
6
2
5
0
V
A
A
)
s
P
0
4
8
1
5
1
5
1
+
A
m
W
W
n
o
n
e
p
e
p
p
s
o
p
m
e
T
m
e
T
0
0
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
0
0
0
a
1
1
4
m
t
e
C
e
C
n
G
P
h
w
a
a
p
V
n
o
S
f
C
f
C
t
e
C
d
n
a
B
-
G
C
t
p
O
E
-
C
r
r
m
C
D
e
C
E
I
I
O
O
B
B
F
fT
o
C
E
hE
VB
C
VB
E
VE
C
VE
C
VB
C
IC
=
IC
=
IC
=
IC
=
IE
=
e
S
e
S
e
S
I
V
I
V
I
V
2
V
0
1
=
0
1
=
I
A
5
0
2
4
=
=
=
E0
=
C0
=
C
=
I
C
=
V
=
0
0
0
A
A
n
n
t
A
A
m
m
z
A
0
0
H
m
0
5
M
5
1
=
1
7
0
4
1
t
u
d
o
e
c
a
0
9
8
5
5
1
1
z
H
F
p
V
V
V
V
V
n
n
n
M
n
a
b
C
e
g
V
)
s
E
C
B
1
8
4
2
e
g
g
g
g
a
V
a
V
n
a
V
n
w
V
n
w
e
m
e
m
n
w
o
S
a
e
B
a
e
B
a
e
B
N
O
-
T
e
g
a
S
m
i
l
F
E
B
-
E
-
B
-
-
B
C
C
E
V
)
B
C
E
C
)
B
E
)
R
tn
o
tg
tf
s
E
)
R
R
B
B
(
B
B
(
I
A
I
A
μ
,
A
m
A
μ
0
e
p
s
e
p
s
e
p
s
5
0
1
1
1
e
e
e
B
E0
=
R
B=
∞
I
C0
=
d
e
d
e
d
e
A
m
5
7
=
e
e
e
o
o
o
d
d
d
k
k
k
i
i
e
V
V
V
O
O
O
(
0
5
6
3
2
E
a
t
t
t
c
C
c
C
c
C
t
e
t
e
T
t
e
T
T
0
0
5
6
0
2
s
s
s
5
相關PDF資料 |
PDF描述 |
|---|---|
| FP211 | NPN Epitaxial Planar Silicon Transistor Driver Applications |
| FP213 | PNP Epitaxial Planar Silicon Transistor Motor Driver Applications |
| FP214 | NPN Epitaxial Planar Silicon Transistor Motor Driver Applications |
| FP215 | High-Frequency Amp, Differential Amp Applications |
| FP216 | LCD Backlight Drive Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FP2-09 | 制造商:TE Connectivity 功能描述: |
| FP2093 | 制造商:BACO Controls Inc 功能描述: |
| FP209-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTORNPNNPN25V2APCP5 |
| FP20R06KL4 | 功能描述:IGBT 模塊 600V 20A EASY MOUNT RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06W1E3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
發布緊急采購，3分鐘左右您將得到回復。