- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375873 > FPNH10 (FAIRCHILD SEMICONDUCTOR CORP) NPN RF Transistor(NPN射頻晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | FPNH10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN RF Transistor(NPN射頻晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 343K |
| 代理商： | FPNH10 |
F
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100
μ
A to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
FPNH10
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
25
30
3.0
50
V
V
V
mA
°
C
-55 to +150
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25
°
C unless otherwise noted
C
E
B
TO-92
Symbol
Characteristic
Max
Units
FPNH10
350
2.8
125
357
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor Corporation
FPNH10 Rev. A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FPR2-2614 | High Stability Extremly Low-Ohm |
| FPR2-1617 | High Stability Extremly Low-Ohm |
| FPR2-1617R500K | High Stability Extremly Low-Ohm |
| FPR2-1623 | High Stability Extremly Low-Ohm |
| FPR2-162310RB | High Stability Extremly Low-Ohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPNH10_Q | 功能描述:兩極晶體管 - BJT NPN/ 25V/ 50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPNLCB147WRK0 | 制造商:Sharp 功能描述:PANEL SUB ASSY R22GT 制造商:Sharp 功能描述:DISCD PANEL SUB ASSY R22GT 制造商:Sharp Microelectronics Corporation 功能描述:PANEL SUB ASSY R22GT |
| FPNLCB185MRK0 | 制造商:Sharp 功能描述:C/P ASSY R1460A |
| FPNLCB263MRK0 | 制造商:Sharp Microelectronics Corporation 功能描述:CONTROL PANEL ASSY R1610 |
| FPNLCB327MRK0 | 制造商:Sharp Microelectronics Corporation 功能描述:C/P ASSY - R1752 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。