- 您現在的位置：買賣IC網 > PDF目錄375875 > FQA12N60 (FAIRCHILD SEMICONDUCTOR CORP) 600V N-Channel MOSFET PDF資料下載
參數資料
| 型號： | FQA12N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 628K |
| 代理商： | FQA12N60 |
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev.
B
, May 2000
Elerical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.65mH, I
= -12.6A, V
DD
= -50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
-11.5A, di/dt
≤
300A/
μ
s, V
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250
μ
A
-200
--
--
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25°C
--
-
--
V/°C
V
DS
= -200 V, V
GS
= 0 V
V
DS
= -160 V, T
C
= 125°C
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
-1
-10
-100
100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
μ
A
-3.0
--
-5.0
V
V
GS
= -10 V, I
D
= -6.3 A
--
0.36
0.47
V
DS
= -40 V, I
D
= -6.3 A
--
6.6
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
920
190
30
1200
250
40
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= -100 V, I
D
= -11.5 A,
R
G
= 25
--
--
--
--
--
--
--
20
195
40
60
31
8.1
16
50
400
90
130
40
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -160 V, I
D
= -11.5 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
-12.6
-50.4
-5.0
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= -12.6 A
V
GS
= 0 V, I
S
= -11.5 A,
dI
F
/ dt = 100 A/
μ
s
180
1.44
相關PDF資料 |
PDF描述 |
|---|---|
| FQA13N50CF | 500V N-Channel MOSFET |
| FQA13N50C | 500V N-Channel MOSFET |
| FQA13N50 | 500V N-Channel MOSFET(漏源電壓為500V的N溝道增強型MOSFET) |
| FQA13N80 | 800V N-Channel MOSFET |
| FQA140N10 | 100V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQA12P20 | 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N50 | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N50C | 功能描述:MOSFET 500V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N50C_F109 | 功能描述:MOSFET 500V CFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N50CF | 功能描述:MOSFET 500V N-Ch C-FET (FRFET) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。