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參數資料
| 型號： | FQA13N50CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 640K |
| 代理商： | FQA13N50CF |
2
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FQA13N50CF Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, I
AS
= 15A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
15A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA13N50CF
FQA13N50CF
TO-3P
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25°C
500
--
--
V
Breakdown Voltage Temperature Coefficient
--
0.5
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
1
μ
A
μ
A
--
--
10
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 7.5 A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
--
0.43
0.48
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40 V, I
D
= 7.5 A
(Note 4)
--
15
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1580
2055
pF
Output Capacitance
--
180
235
pF
Reverse Transfer Capacitance
--
20
25
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 250 V, I
D
= 15 A,
R
G
= 25
(Note 4, 5)
--
25
60
ns
Turn-On Rise Time
--
100
210
ns
Turn-Off Delay Time
--
130
270
ns
Turn-Off Fall Time
--
100
210
ns
Total Gate Charge
V
DS
= 400 V, I
D
= 15 A,
V
GS
= 10 V
(Note 4, 5)
--
43
56
nC
Gate-Source Charge
--
7.5
--
nC
Gate-Drain Charge
--
18.5
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
15
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 15 A
V
GS
= 0 V, I
S
= 15 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
100
--
ns
Reverse Recovery Charge
--
2.1
--
μ
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQA13N50CF_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FQA13N50CF_F109 | 功能描述:MOSFET 500V N-Ch C-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N80 | 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N80 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P |
| FQA13N80_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
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