欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQA13N80
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 800V N-Channel MOSFET
中文描述: 12.6 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數: 3/8頁
文件大小: 731K
代理商: FQA13N80
Rev. A, March 2001
2001 Fairchild Semiconductor Corporation
F
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 50V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
V
DS
= 400V
V
DS
= 160V
V
DS
= 640V
Note : I
D
= 12.6 A
V
G
,
Q
G
, Total Gate Charge [nC]
0
5
10
15
20
25
30
35
40
45
0.3
0.6
0.9
1.2
1.5
1.8
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
Ω
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
10.0 V
8.0 V
7.0 V
6.5 V
Bottom : 5.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關PDF資料
PDF描述
FQA140N10 100V N-Channel MOSFET
FQA14N30 300V N-Channel MOSFET
FQA15N70 Wire-To-Board Connector; No. of Contacts:24; Pitch Spacing:0.1"; No. of Rows:2; Mounting Type:PCB Straight Thru Hole; Gender:Female; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
FQA160N08 80V N-Channel MOSFET
FQA16N25C 250V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQA13N80 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P
FQA13N80_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA13N80_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA13N80_F109 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA13N80-F109 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:12.6 A, 800 V, RDS(on) = 750 m?? (Max.) @ VGS = 10 VID = 6.8 A
主站蜘蛛池模板: 新巴尔虎左旗| 漳州市| 西乌| 水城县| 邵阳市| 托里县| 泌阳县| 陇川县| 瑞金市| 龙州县| 常山县| 德惠市| 普安县| 易门县| 葫芦岛市| 永嘉县| 皋兰县| 合肥市| 庆元县| 宜宾市| 仪征市| 梁山县| 唐海县| 巴南区| 揭阳市| 哈巴河县| 河间市| 内黄县| 白河县| 宁远县| 会东县| 威宁| 元氏县| 珲春市| 江西省| 左云县| 图片| 汕尾市| 常州市| 合水县| 茶陵县|