- 您現在的位置：買賣IC網 > PDF目錄375875 > FQA36P15 (FAIRCHILD SEMICONDUCTOR CORP) 150V P-Channel MOSFET PDF資料下載
參數資料
| 型號： | FQA36P15 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V P-Channel MOSFET |
| 中文描述： | 36 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TO-3PN, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 658K |
| 代理商： | FQA36P15 |
2003 Fairchild Semiconductor Corporation
Rev. B, December 2003
F
QF E T
FQA36P15
150V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
-36A, -150V, R
DS(on)
= 0.09
@V
GS
= -10 V
Low gate charge ( typical 81 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQA36P15
-150
-36
-25.5
-144
±
30
1400
-36
29.4
-5.0
294
1.96
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.51
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
TO-3P
FQA Series
G
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| FQA38N30 | 300V N-Channel MOSFET(漏源電壓為300V的N溝道增強型MOSFET) |
| FQA38N40 | RECTIFIER FAST-RECOVERY SINGLE 2A 50V 50A-ifsm 0.92V-vf 25ns 5uA-ir SMB 3K/REEL-13 |
| FQA40N25 | 250V N-Channel MOSFET |
| FQA44N08 | 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強型MOSFET) |
| FQA44N10 | 100V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQA36P15 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FQA36P15_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V P-Channel MOSFET |
| FQA36P15_F109 | 功能描述:MOSFET 150V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA38N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA38N40 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET |
發布緊急采購，3分鐘左右您將得到回復。