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參數(shù)資料
| 型號： | FQA8N100C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 1000V N-Channel MOSFET |
| 中文描述： | 8 A, 1000 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 693K |
| 代理商： | FQA8N100C |
2005 Fairchild Semiconductor Corporation
FQA8N100C Rev. A
1
www.fairchildsemi.com
F
September 2005
QFET
FQA8N100C
1000V N-Channel MOSFET
Features
8A, 1000V, R
DS(on)
= 1.45
@V
GS
= 10 V
Low gate charge (typical 53 nC)
Low C
rss
(typical 16 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies.
Absolute Maximum Ratings
Thermal Characteristics
! "
!
!
S
!
"
"
D
G
G
S
D
TO-3P
FQA Series
Symbol
Parameter
FQA8N100C
Unit
V
DSS
I
D
Drain-Source Voltage
1000
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
8
5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
32
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
850
mJ
Avalanche Current
(Note 1)
8
A
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
225
1.79
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.56
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
--
40
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