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參數(shù)資料
| 型號： | FQI6N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOSFET) |
| 中文描述： | 6.2 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 547K |
| 代理商： | FQI6N60 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0
3
6
Q
G
, Total Gate Charge [nC]
9
12
15
18
21
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 480V
V
DS
= 120V
Note : I
D
= 6.2 A
V
G
,
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
25
150
Notes :
1. V
= 0V
2. 250 s Pulse Test
I
D
0
2
4
6
8
10
12
14
16
0
1
2
3
4
5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
]
D
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
Notes :
1. V
= 50V
2. 250 s Pulse Test
-55
150
25
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
Notes :
1. 250 s Pulse Test
2. T
C
= 25
GS
V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I
D
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQI6N60C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQI6N60CTU | 功能描述:MOSFET 600V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI6N70 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:700V N-Channel MOSFET |
| FQI6N70TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI6N80 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
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