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參數資料
| 型號： | FQP12N60C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | FQP12N60C/FQPF12N60C |
| 中文描述： | 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 873K |
| 代理商： | FQP12N60C |
2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
F
QF E T
TM
FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
12A, 600V, R
DS(on)
= 0.65
@V
GS
= 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP12N60C
FQPF12N60C
600
12 *
7.4 *
48 *
±
30
870
12
22.5
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
12
7.4
48
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
225
1.78
51
0.41
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FQP12N60C
0.56
0.5
62.5
FQPF12N60C
2.43
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
●
●
▲
!
!
!
S
!
!
!
!
D
G
相關PDF資料 |
PDF描述 |
|---|---|
| FQPF12N60C | FQP12N60C/FQPF12N60C |
| FQP13N06L | 60V LOGIC N-Channel MOSFET |
| FQP13N10L | 100V LOGIC N-Channel MOSFET |
| FQP13N10 | 100V N-Channel MOSFET |
| FQP13N06 | Flat / Ribbon Cable; Number of Conductors:50; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Leaded Process Compatible:No; Jacket Material:Polyvinylchloride (PVC); Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP12N60C_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQP12N60C_F080 | 制造商:Fairchild 功能描述:600V/12A N-CH MOSFET C-SERIES |
| FQP12P10 | 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP12P20 | 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP12P20 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):360mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V; No. of Pins:3 ;RoHS Compliant: No |
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