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參數(shù)資料
| 型號： | FQP12N60C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | FQP12N60C/FQPF12N60C |
| 中文描述： | 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 873K |
| 代理商： | FQP12N60C |
Rev. B, October 2003
2003 Fairchild Semiconductor Corporation
F
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※
N otes :
1. Z
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
θ
(t) = 0.56
℃
/W M ax.
JC
(t)
sin gle pu lse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※
Notes :
θ
JC
(t) = 2.43
℃
//t
1
2
1. Z
JM
- T
C
= P
DM
* Z
θ
JC
(t)
sin gle pu lse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
t
1
P
DM
t
2
t
1
P
DM
t
2
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| FQP12N60C_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
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| FQP12P20 | 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP12P20 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):360mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V; No. of Pins:3 ;RoHS Compliant: No |
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