- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375887 > FQP18N50V2 (FAIRCHILD SEMICONDUCTOR CORP) 500V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | FQP18N50V2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 18 A, 500 V, 0.265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 839K |
| 代理商： | FQP18N50V2 |
2002 Fairchild Semiconductor Corporation
F
QF E T
TM
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Features
18A, 500V, R
DS(on)
= 0.265
@V
GS
= 10 V
Low gate charge ( typical 42 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP18N50V2
FQPF18N50V2
500
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
18
12.1
72
18
12.1
72
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
330
18
25
4.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
208
1.67
69
0.55
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
●
●
▲
!
!
!
S
!
!
!
!
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQPF18N50V2 | 500V N-Channel MOSFET |
| FQP19N10L | 100V LOGIC N-Channel MOSFET |
| FQP19N10 | GIGATRUE CAT6 UNIVERSAL JACK, ORANGE 25 PACK |
| FQP19N20 | 200V N-Channel MOSFET |
| FQP19N20L | 200V LOGIC N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQP18N50V2_Q | 功能描述:MOSFET 500V N-Ch QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP19N10 | 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP19N10L | 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP19N20 | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP19N20 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W ;RoHS Compliant: Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。