- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375887 > FQP1N60 (FAIRCHILD SEMICONDUCTOR CORP) QFET N-CHANNEL PDF資料下載
參數(shù)資料
| 型號： | FQP1N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | QFET N-CHANNEL |
| 中文描述： | 1.2 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 519K |
| 代理商： | FQP1N60 |
1
FEATURES
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 5.0nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 9.3
(Typ.)
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Symbol
Characteristics
Value
Units
V
DSS
Drain-to-Source Voltage
600
V
I
D
Continuous Drain Current (T
C
= 25
°
C)
Continuous Drain Current (T
C
= 100
°
C)
Drain Current-Pulsed
1.2
A
0.76
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
4.8
A
Gate-to-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
50
mJ
Avalanche Current
1.2
A
Repetitive Avalanche Energy
4.0
mJ
Peak Diode Recovery dv/dt
4.5
V/ns
P
D
Total Power Dissipation (T
C
= 25
°
C)
Linear Derating Factor
40
0.32
W
W/
°
C
T
J
, T
STG
Operating Junction and Storage
Temperature Range
55 to +150
°
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
300
Symbol
Characteristics
Typ.
Max.
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
3.13
°
C/W
Case-to-Sink
0.5
Junction-to-Ambient
62.5
BV
DSS
= 600V
R
DS(ON)
= 11.5
I
D
= 1.2A
TO-220
1. Gate 2. Drain 3. Source
3
2
1
QFET N-CHANNEL
FQP1N60
1999 Fairchild Semiconductor Corporation
REV. B
x
y
x
x
z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQP1P50 | 500V P-Channel MOSFET |
| FQP20N06L | 60V LOGIC N-Channel MOSFET |
| FQP20N06 | 60V N-Channel MOSFET |
| FQP22N30 | 300V N-Channel MOSFET |
| FQP22P10 | 100V P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQP1P50 | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP20N06 | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP20N06_Q | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP20N06L | 功能描述:MOSFET 60V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP20N06TSTU | 功能描述:MOSFET 60V N-Channel QFET Short Leads RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。