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參數(shù)資料
| 型號： | FQP1N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | QFET N-CHANNEL |
| 中文描述： | 1.2 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 519K |
| 代理商： | FQP1N60 |
FQP1N60
QFET N-CHANNEL
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise specified)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Notes:
x
y
z
{
|
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=64mH, I
AS
=1.2A, V
DD
=50V, R
G
=25
, Starting T
J
=25
°
C
I
SD
≤
1.2A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Essentially Independent of Operating Temperature
Symbol
Characteristics
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
BV/
T
J
V
GS(th)
Drain-Source Breakdown Voltage
600
V
V
GS
=0V, I
D
=250
μ
A
I
D
=250
μ
A,
See Fig 7
V
DS
=5V, I
D
=250
μ
A
V
GS
=30V
V
GS
=
30V
V
DS
=600V
V
DS
=480V, T
C
=125
°
C
Breakdown Voltage Temp. Coeff.
0.4
V/
°
C
Gate Threshold Voltage
3.0
5.0
V
I
GSS
Gate-Source Leakage, Forward
100
nA
Gate-Source Leakage, Reverse
100
I
DSS
Drain-to-Source Leakage Current
10
μ
A
100
R
DS(on)
Static Drain-Source
On-State Resistance
9.3
11.5
V
GS
=10V, I
D
=0.6A
{
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Forward Transconductance
0.9
S
V
DS
=50V, I
D
=0.6A
{
Input Capacitance
120
150
pF
V
GS
=0V, V
DS
=25V
f=1MHz
See Fig 5
Output Capacitance
20
25
Reverse Transfer Capacitance
3.0
4.0
Turn-On Delay Time
5
20
ns
V
DD
=300V, I
D
=1.2A
R
G
=50
See Fig 13
{ |
Rise Time
25
60
Turn-Off Delay Time
7
25
Fall Time
25
60
Total Gate Charge
5.0
6.0
nC
V
DS
=480V, V
GS
=10V
I
D
=1.2A
See Fig 6 & Fig 12
{ |
Gate-Source Charge
1.0
Gate-Drain (Miller) Charge
2.6
Symbol
Characteristics
Min.
Typ.
Max.
Units
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
1.2
A
Integral reverse pn-diode
in the MOSFET
Pulsed-Source Current
x
4.8
Diode Forward Voltage
{
1.4
V
T
J
=25
°
C, I
S
=1.2A, V
GS
=0V
Reverse Recovery Time
160
ns
T
J
=25
°
C, I
F
=1.2A, V
DD
=480V
di
F
/dt=100A/
μ
s
{
Reverse Recovery Charge
0.3
μ
C
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