- 您現在的位置：買賣IC網 > PDF目錄375887 > FQP27P06 (FAIRCHILD SEMICONDUCTOR CORP) Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | FQP27P06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes |
| 中文描述： | 27 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 6/8頁 |
| 文件大小： | 695K |
| 代理商： | FQP27P06 |
F
2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
(N-Channel)
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Compliment of DUT
dv/dt controlled by R
G
Body Diode
相關PDF資料 |
PDF描述 |
|---|---|
| FQP27N25 | 250V N-Channel MOSFET |
| FQP28N15 | 150V N-Channel MOSFET |
| FQP2N30 | 300V N-Channel MOSFET |
| FQP2N40 | 400V N-Channel MOSFET |
| FQP2N50 | 500V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQP27P06 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 |
| FQP27P06_F080 | 制造商:Fairchild 功能描述:60V/27A P-CH MOSFET |
| FQP27P06_SW82127 | 功能描述:MOSFET 60V 27A 0.07 Ohm P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP27P06X | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 60V 27A TO220AB |
| FQP28N15 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。