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參數(shù)資料
| 型號(hào)： | FQT2P25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V P-Channel MOSFET |
| 中文描述： | 0.55 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 654K |
| 代理商： | FQT2P25 |
F
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
-
D
,
T
C
, Case Temperature [
℃
]
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
-
D
,
-V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
t
1
, Square W ave P ulse D uration [sec]
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
※
N otes :
1. Z
2. D uty Factor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
(t) = 50
℃
/W M ax.
J C
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
J
(
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
= -10 V
2. I
D
= -0.275 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
= 0 V
2. I
D
= -250
μ
A
-
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQT2P25TF | 功能描述:MOSFET -250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT3N25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 700MA I(D) | SOT-223 |
| FQT3N25TF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT3P20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET |
| FQT3P20TF | 功能描述:MOSFET -200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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