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參數資料
| 型號： | FQT4N20 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 4/8頁 |
| 文件大小： | 629K |
| 代理商： | FQT4N20 |
F
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
10
-5
10
-4
10
t
1
, Square W ave P ulse D uration [sec]
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
※
N otes :
1. Z
2. D uty Factor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
(t) = 57
℃
/W M ax.
J C
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
J
(
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
I
D
,
T
C
, Case Temperature [
℃
]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
= 10 V
2. I
D
= 0.425 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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| FQT4N25 | 250V N-Channel MOSFET |
| FQT5P10 | 250V N-Channel MOSFET |
| FQT7N10L | 100V LOGIC N-Channel MOSFET |
| FQT7N10 | 100V N-Channel MOSFET |
| FQT7P06 | 60V P-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQT4N20L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
| FQT4N20LTF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT4N20TF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT4N25 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FQT4N25TF | 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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