- 您現在的位置：買賣IC網 > PDF目錄375881 > FQU17P06 (FAIRCHILD SEMICONDUCTOR CORP) 60V P-Channel MOSFET(漏源電壓為-60V、漏電流為-12A的P溝道增強型MOS場效應管) PDF資料下載
參數資料
| 型號： | FQU17P06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V P-Channel MOSFET(漏源電壓為-60V、漏電流為-12A的P溝道增強型MOS場效應管) |
| 中文描述： | 12 A, 60 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 662K |
| 代理商： | FQU17P06 |
2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
F
QFET
TM
FQD17P06 / FQU17P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
-12A, -60V, R
DS(on)
= 0.135
@V
GS
= -10 V
Low gate charge ( typical 21 nC)
Low Crss ( typical 80 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD17P06 / FQU17P06
-60
-12
-7.6
-48
±
25
300
-12
4.4
-7.0
2.5
44
0.35
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.85
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
相關PDF資料 |
PDF描述 |
|---|---|
| FQD18N20V2 | 200V N-Channel MOSFET |
| FQU18N20V2 | 200V N-Channel MOSFET |
| FQD19N10L | GIGATRUE CAT6 UNIVERSAL JACK, WHITE |
| FQU19N10L | 100V LOGIC N-Channel MOSFET |
| FQD19N10 | 100V N-Channel MOSFET(漏源電壓為100V、漏電流為5.6A的N溝道增強型MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQU17P06_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET |
| FQU17P06TU | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU18N20V2 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQU18N20V2_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQU18N20V2TU | 功能描述:MOSFET 200V N-Ch adv QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。