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參數資料
| 型號： | FS22SM-10 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 22 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | FS22SM-10 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS22SM-10
HIGH-SPEED SWITCHING USE
40
32
24
16
8
00
4
8
12
16
20
T
C
= 25°C
Pulse Test
I
D
= 40A
30A
20A
10A
40
32
24
16
8
00
4
8
12
16
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
2
7
5
3
2
10
10
0
2 3
5 7 10
1
10
1
7
5
3
2
2 3
5 7 10
2
T
C
= 25°C
150°C
75°C
V
DS
= 10V
Pulse Test
2 3 5 710
1
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
2 3 5 710
2
2 3 5 710
0
2 3
Tch = 25°C
f = 1MHz
V
GS
= 0V
Ciss
Coss
Crss
2 3
5 7 10
1
10
3
7
5
3
2
10
2
7
5
3
2
2 3
5 7 10
2
10
0
10
1
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
0
10
–1
2 3
5 710
0
2 3 5 710
1
2 3 5 710
2
0.5
0.4
0.3
0.2
0.1
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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|---|---|
| FS22SM-12A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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| FS22SM-9 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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