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參數資料
| 型號： | FS22SM-10 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 22 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | FS22SM-10 |
Feb.1999
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
20
16
12
8
4
00
40
80
120
160
200
200V
400V
V
DS
= 100V
Tch = 25°C
I
D
= 22A
40
32
24
16
8
00
0.8
1.6
2.4
3.2
4.0
25°C
V
GS
= 0V
Pulse Test
T
C
=125°C
75°C
10
0
7
5
3
2
10
–1
–50
10
1
7
5
3
2
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
B
D
B
MITSUBISHI Nch POWER MOSFET
FS22SM-10
HIGH-SPEED SWITCHING USE
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相關代理商/技術參數 |
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|---|---|
| FS22SM-12A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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| FS22SM-9 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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