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參數資料
| 型號： | FS50R12KT3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | echnische Information / technical information |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-28 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 276K |
| 代理商： | FS50R12KT3 |
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
相關PDF資料 |
PDF描述 |
|---|---|
| FS50SM-06 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS50SM-06 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS50SM-2 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS50SM-2 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS50SM-3 | HIGH-SPEED SWITCHING USE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FS50R12KT3_04 | 制造商:EUPEC 制造商全稱:EUPEC 功能描述:EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode |
| FS50R12KT4_B11 | 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FS50R12KT4_B15 | 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FS50R12W2T4 | 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FS50R12W2T4_B11 | 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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