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參數資料
| 型號： | FSAB20PH60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Smart Power Module for Partial Switching Converter |
| 中文描述： | 1-OUTPUT DC-DC UNREG PWR SUPPLY MODULE |
| 文件頁數： | 5/16頁 |
| 文件大小： | 589K |
| 代理商： | FSAB20PH60 |
5
www.fairchildsemi.com
FSAB20PH60 Rev. A
F
Absolute Maximum Ratings
Thermal Resistance
Symbol
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified)
Main Circuit Part
Symbol
Note:
3. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Parameter
Conditions
Min.
Typ.
Max.
Units
R
th(j-c)Q
Junction to Case Thermal
Resistance
Each IGBT under Operating Condition
-
-
2.8
°C/W
R
th(j-c)D
Each Diode under Operating Condition
-
-
2.6
°C/W
Item
Conditions
Min.
Typ.
Max.
Units
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
CC
= V
BS
=15V
V
IN
= 5V
V
IN
= 0V
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 6.5A
V
IN
= 0V
5V, Inductive Load
(Note 3)
I
C
= 6.5A, T
J
= 25°C
-
2.1
2.6
V
V
FM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
CES
Diode Forward Voltage
I
C
= 20A, T
J
= 25°C
-
1.1
1.5
V
Switching Times
-
0.48
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
A
-
0.85
-
-
0.56
-
-
0.10
-
-
1.35
-
Collector - Emitter
Leakage Current
V
CE
= V
CES
-
-
250
I
R
Diode Leakage Current
V
R
= V
RRM
-
-
250
μ
A
V
CE
I
C
V
IN
t
OFF
t
C(OFF)
V
IN(OFF)
10% V
CE
10% I
C
V
CE
I
C
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
10% V
CE
90% I
C
100% I
C
t
rr
120% I
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAB20PH60_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module for Partial Switching Converter |
| FSAB3 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
| FSAB56-EMC | 制造商:AXIOMTEK 制造商全稱:AXIOMTEK 功能描述:SATA II standard interface |
| FSAC1 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
| FSAC10SH60 | 功能描述:IGBT 晶體管 600V 10A SPIM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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