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參數資料
| 型號： | FSAB20PH60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Smart Power Module for Partial Switching Converter |
| 中文描述： | 1-OUTPUT DC-DC UNREG PWR SUPPLY MODULE |
| 文件頁數： | 6/16頁 |
| 文件大小： | 589K |
| 代理商： | FSAB20PH60 |
6
www.fairchildsemi.com
FSAB20PH60 Rev. A
F
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified)
Control Part
Symbol
Note:
4. Over current protection is functioning only for the low-side IGBT.
5. The fault-out pulse width t
FOD
depends on the capacitance value of C
FOD
according to the following approximate equation : C
FOD
= 18.3 x 10
-6
x t
FOD
[F]
Recommended Operating Conditions
Note:
6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5.
Parameter
Conditions
Min.
Typ.
Max.
Units
I
QCCL
Quiescent V
CC
Supply
Current
V
CC
= 15V
IN
(L)
= 0V
V
SC
= 0V, V
FO
Circuit: 4.7k
to 5V Pull-up
V
SC
= 1V, V
FO
Circuit: 4.7k
to 5V Pull-up
V
CC
= 15V (Note 4)
Detection Level
V
CC(L)
- COM
-
-
23
mA
V
FOH
V
FOL
V
SC(ref)
UV
CCD
UV
CCR
t
FOD
V
IN(ON)
V
IN(OFF)
R
TH
Fault Output Voltage
4.5
-
-
V
-
-
0.8
V
Short Circuit Trip Level
0.45
0.5
0.55
V
Supply Circuit Under-
Voltage Protection
10.7
11.9
13.0
V
Reset Level
11.2
12.4
13.2
V
Fault-out Pulse Width
C
FOD
= 33nF (Note 5)
Applied between IN
(R)
, IN
(S)
- COM
1.0
1.8
-
ms
ON Threshold Voltage
3.0
-
-
V
OFF Threshold Voltage
-
-
0.8
V
Resistance of Thermistor
@ T
C
= 25°C (Note Fig. 10)
@ T
C
= 80°C (Note Fig. 10)
-
50
-
k
k
-
5.76
-
Symbol
Parameter
Condition
Value
Typ.
Units
Min.
Max.
V
i
Input Supply Voltage
Applied between R - S
187
-
276
V
rms
V
V
PN
V
CC
f
PWM
Output Voltage
Applied between P - N
-
280
400
Control Supply Voltage
Applied between V
CC
- COM
T
C
≤
100°C, T
J
≤
125°C, Per IGBT (Note 6)
13.5
15
16.5
V
PWM Input Signal
-
60
-
Hz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAB20PH60_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module for Partial Switching Converter |
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| FSAC10SH60 | 功能描述:IGBT 晶體管 600V 10A SPIM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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