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參數資料
| 型號： | FSAM20SH60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | AC MOTOR CONTROLLER, 40 A, DMA32 |
| 文件頁數： | 2/17頁 |
| 文件大小： | 975K |
| 代理商： | FSAM20SH60A |
2002 Fairchild Semiconductor Corporation
F
Rev. A, September 2002
Integrated Power Functions
600V-20A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 14and 15.
For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection
Control supply circuit under-voltage (UV) protection
Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 15.
Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)
Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Fig. 2.
Top View
(9) C
SC
(12) V
CC(UH)
(14) V
S(U)
(17) V
CC(VH)
(19) V
S(V)
(21) V
CC(WH)
(23) V
S(W)
(26) N
U
(27) N
V
(28) N
W
(29) U
(30) V
(31) W
(32) P
Detecting Point
Ceramic Substrate
(8) C
FOD
(11) IN
(UH)
(13) V
B(U)
(16) com
(H)
(18) V
B(V)
(20) IN
(WH)
(22) V
B(W)
(25) R
TH
(1) V
(2) com
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) com
(L)
(7) FO
(10) R
SC
(15) IN
(VH)
(24) V
TH
Case Temperature (T
C
)
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| FSAM20SL60 | SPMTM (Smart Power Module) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM20SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM20SL60 | 功能描述:IGBT 晶體管 600V 20A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM20SM60A | 功能描述:IGBT 晶體管 600V/20A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM30SH60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
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