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參數資料
| 型號： | FSAM20SL60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | SPMTM (Smart Power Module) |
| 中文描述： | AC MOTOR CONTROLLER, 40 A, DMA32 |
| 封裝： | DIP-32 |
| 文件頁數： | 3/16頁 |
| 文件大小： | 2360K |
| 代理商： | FSAM20SL60 |
2003 Fairchild Semiconductor Corporation
F
Rev. D, August 2003
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
COM
(L)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
COM
(H)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
V
TH
R
TH
N
U
N
V
N
W
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Low-side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Supply Ground
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
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| FSAM30SM60A | SPMTM (Smart Power Module) General Description |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM20SM60A | 功能描述:IGBT 晶體管 600V/20A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM30SH60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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