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參數(shù)資料
| 型號： | FSAM20SM60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | SPMTM (Smart Power Module) |
| 中文描述： | AC MOTOR CONTROLLER, 40 A, DMA32 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大小： | 2339K |
| 代理商： | FSAM20SM60A |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Note:
1) It would be recommended that by-pass capacitors for the gating input signals, IN
, IN
, IN
(WL)
, IN
(UH)
, IN
(VH)
and IN
(WH)
should be placed on the SPM pins
and on the both sides of CPU and SPM for the fault output signal, V
FO
, as close as possible.
2) The logic input is compatible with standard CMOS or LSTTL outputs.
3) R
C
/R
C
/R
PF
C
PF
coupling at each SPM input is recommended in order to prevent input/output signals’ oscillation and it should be as close as possible to
each of SPM pins.
Fig. 13. Recommended CPU I/O Interface Circuit
Note:
It would be recommended that the bootstrap diode, D
BS
, has soft and fast recovery characteristics.
Fig. 14. Recommended Bootstrap Operation Circuit and Parameters
CPU
COM
5V-Line
1.2nF
0.47nF
1nF
4.7k
4.7k
,
,
IN
(UL)
IN
(VL)
IN
(WL)
,
,
IN
(UH)
IN
(VH)
IN
(WH)
V
FO
100
100
100
1nF
SPM
2k
R
PF
R
PL
R
PH
C
PF
C
PL
C
PH
15V-Line
20
47uF
0.1uF
470uF
0.1uF
One-Leg Diagram of SPM
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
Inverter
Output
P
N
These Values depend on PWM Control Algorithm
D
BS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FSAM30SH60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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