欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FSAM20SM60A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 運動控制電子
英文描述: SPMTM (Smart Power Module)
中文描述: AC MOTOR CONTROLLER, 40 A, DMA32
文件頁數: 8/16頁
文件大小: 2339K
代理商: FSAM20SM60A
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified)
Control Part
Note:
5. Short-circuit current protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (R
) should be
selected around 56
in order to make the SC trip-level of about 30A at the shunt resistors (R
,R
,R
) of 0
. For the detailed information about the
relationship between the external sensing resistor (R
) and the shunt resistors (R
,R
,R
), please see Fig. 7.
6. The fault-out pulse width t
depends on the capacitance value of C
FOD
according to the following approximate equation : C
= 18.3 x 10
-6
x t
FOD
[F]
7. T
TH
is the temperature of thermistor itself. To know case temperature (T
C
), please make the experiment considering your application.
Recommended Operating Conditions
Item
Symbol
I
QCCL
Condition
V
CC(L)
- COM
(L)
Min.
-
Typ. Max. Unit
-
26
Quiescent V
CC
Supply Cur-
rent
V
CC
= 15V
IN
(UL, VL, WL)
= 5V
V
CC
= 15V
IN
(UH, VH, WH)
= 5V
V
BS
= 15V
IN
(UH, VH, WH)
= 5V
V
SC
= 0V, V
FO
Circuit: 4.7k
to 5V Pull-up
V
SC
= 1V, V
FO
Circuit: 4.7k
to 5V Pull-up
V
CC
= 15V (Note 5)
R
SC
= 56
, R
SU
= R
SV
= R
SW
= 0
and I
C
= 30A
(Note Fig. 7)
Detection Level
Reset Level
Detection Level
Reset Level
C
FOD
= 33nF (Note 6)
High-Side
Applied between IN
(UH)
, IN
(VH)
,
IN
(WH)
- COM
(H)
Low-Side
Applied between IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
(L)
@ T
TH
= 25°C (Note Fig. 6) (Note 7)
@ T
TH
= 100°C (Note Fig. 6) (Note 7)
mA
I
QCCH
V
CC(UH)
, V
CC(VH)
, V
CC(WH)
-
COM
(H)
V
B(U)
- V
S(U)
, V
B(V)
-V
S(V)
,
V
B(W)
- V
S(W)
-
-
130
uA
Quiescent V
BS
Supply Cur-
rent
Fault Output Voltage
I
QBS
-
-
420
uA
V
FOH
V
FOL
V
SC(ref)
V
SEN
4.5
-
0.45
0.45
-
-
-
V
V
V
V
1.1
0.56
0.56
Short-Circuit Trip Level
Sensing Voltage
of IGBT Current
Supply Circuit Under-
Voltage Protection
0.51
0.51
UV
CCD
UV
CCR
UV
BSD
UV
BSR
t
FOD
V
IN(ON)
V
IN(OFF)
V
IN(ON)
V
IN(OFF)
R
TH
11.5
12
7.3
8.6
1.4
-
3.0
-
3.0
-
-
12
12.5
9.0
10.3
1.8
-
-
-
-
50
3.4
12.5
13
10.8
12
2.0
0.8
-
0.8
-
-
-
V
V
V
V
ms
V
V
V
V
k
k
Fault Output Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
Item
Symbol
Condition
Values
Typ.
300
15
Unit
Min.
-
13.5
Max.
400
16.5
Supply Voltage
Control Supply Voltage
V
PN
V
CC
Applied between P - N
U
, N
V
, N
W
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
-
COM
(H)
, V
CC(L)
- COM
(L)
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
For Each Input Signal
V
V
High-side Bias Voltage
V
BS
13.5
15
16.5
V
Blanking Time for Preventing
Arm-short
PWM Input Signal
Input ON Threshold Voltage
t
dead
3
-
-
us
f
PWM
V
IN(ON)
T
C
100°C, T
J
125°C
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
-
COM
(H)
, IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
-
COM
(H)
, IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
-
5
-
kHz
V
0 ~ 0.65
Input OFF Threshold Voltage
V
IN(OFF)
4 ~ 5.5
V
相關PDF資料
PDF描述
FSAM30SH60A 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
FSAM30SM60A SPMTM (Smart Power Module) General Description
FSAM50SM60A SPMTM (Smart Power Module)
FSAM75SM60A SPMTM (Smart Power Module)
FSAT66L6X Low Voltage Single SPST Normally Open Analog Switch with TTL Compatible Control Input
相關代理商/技術參數
參數描述
FSAM30SH60A 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM30SH60A 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC
FSAM30SH60A_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module)
FSAM30SM60A 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM30SM60SL 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
主站蜘蛛池模板: 德清县| 侯马市| 吉隆县| 沾化县| 吴旗县| 遂宁市| 荃湾区| 忻州市| 柏乡县| 西乌| 深圳市| 东源县| 古交市| 墨江| 商水县| 太谷县| 承德市| 余庆县| 大埔区| 北宁市| 万山特区| 遂昌县| 鹤壁市| 凯里市| 榆中县| 东乌珠穆沁旗| 漯河市| 城口县| 富平县| 扶绥县| 静宁县| 靖边县| 万山特区| 永川市| 大同市| 嘉鱼县| 宣武区| 寻甸| 利辛县| 宁蒗| 大新县|