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參數資料
型號: FSAM50SM60A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 運動控制電子
英文描述: SPMTM (Smart Power Module)
中文描述: AC MOTOR CONTROLLER, 100 A, DMA32
封裝: SPM-32
文件頁數: 6/16頁
文件大小: 428K
代理商: FSAM50SM60A
2006 Fairchild Semiconductor Corporation
F
April 3, 2006
Absolute Maximum Ratings
Thermal Resistance
Note
2. For the measurement point of case temperature(T
), please refer to Fig. 2.
3. The thickness of thermal grease should not be more than 100um.
Package Marking and Ordering Information
Electrical Characteristics
Inverter Part
(T
J
= 25°C, Unless Otherwise Specified)
Note
4. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4.
Item
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Condition
Min. Typ.
-
-
-
Max.
1.0
1.5
0.06
Unit
°C/W
°C/W
°C/W
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
-
-
-
Contact Thermal
Resistance
Device Marking
Device
Package
Real Size
Tape Width
Quantity
FSAM50SM60A
FSAM50SM60A
SPM32-CA
-
-
8
Item
Symbol
V
CE(SAT)
Condition
Min.
-
Typ.
-
Max.
2.4
Unit
V
Collector - emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
V
CC
= V
BS
= 15V
V
IN
= 0V
V
IN
= 5V
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 50A, T
J
= 25°C
V
IN
= 5V
0V, Inductive Load
(High-Low Side)
I
C
= 50A, T
J
= 25°C
V
FM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
CES
I
C
= 50A, T
J
= 25°C
-
-
-
-
-
-
-
-
2.1
-
-
-
-
-
250
V
μ
s
μ
s
μ
s
μ
s
μ
s
μ
A
(Note 4)
V
CE
= V
CES
, T
J
= 25°C
0.69
0.32
1.32
0.46
0.10
-
Collector - emitter
Leakage Current
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相關代理商/技術參數
參數描述
FSAM75SM60A 功能描述:IGBT 模塊 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM75SM60SL 功能描述:IGBT 模塊 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAP502Y 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTER 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTERCONNECT CA - Cable Rools/Shrink Tubing
FSAP602Y 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 62.5INTER 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 62.5INTERCONNECT CA - Cable Rools/Shrink Tubing
FSAP902Y 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND SM INTERCONNECT CAB - Cable Rools/Shrink Tubing
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