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參數資料
| 型號： | FSB6726 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier |
| 中文描述： | 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 23K |
| 代理商： | FSB6726 |
FSB6726
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0 A. Sourced from Process 77.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
1.5
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
40
Collector-Base Voltage
V
CBO
V
30
Collector-Emitter Voltage
V
CEO
Units
FSB660/FSB660A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
500
Total Device Dissipation
P
D
FSB6726
Units
Max
Characteristic
Symbol
Page 1 of 2
fsb6726lwp Pr77 RevA
SuperSOT
TM
-3
F
1999 Fairchild Semiconductor Corporation
C
E
B
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相關代理商/技術參數 |
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| FSB6726_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| FSB-6M | 制造商:MISCELLANEOUS 功能描述: |
| FSB749 | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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