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參數(shù)資料
型號(hào): FSF250R3
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
中文描述: 24 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝: HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 45K
代理商: FSF250R3
3-111
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
IF R = 0
10
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSF250D, FSF250R
相關(guān)PDF資料
PDF描述
FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF254D1 CONNECTOR ACCESSORY
FSF254D3 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF254D 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSF250R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF2510 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 25A 3PIN TO-254 - Bulk
FSF2520 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 25A 3PIN TO-254 - Bulk
FSF254D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSF254D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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