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參數(shù)資料
| 型號： | FSJ160R3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 70 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 60K |
| 代理商： | FSJ160R3 |
3-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
500
500
100
0.1
T
C
= 25
o
C
100
μ
s
1ms
100ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 44A
FSJ160D, FSJ160R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSJ160R4 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ163D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSJ160R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ163D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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