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參數資料
| 型號： | FSJ160R3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 70 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 60K |
| 代理商： | FSJ160R3 |
3-5
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
θ
J
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
0.001
0.01
0.1
1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
100
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
500
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
IF R = 0
FSJ160D, FSJ160R
相關PDF資料 |
PDF描述 |
|---|---|
| FSJ160R4 | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ163D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSJ160R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSJ163D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSJ163R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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