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參數資料
| 型號： | FSL130D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 8 A, 100 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數： | 2/8頁 |
| 文件大小： | 45K |
| 代理商： | FSL130D3 |
3-30
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSL130D, FSL130R
100
100
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
8
5
A
A
A
V
24
±
20
25
10
0.20
24
8
24
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 8A
I
D
= 5A,
V
GS
= 12V
-
1.93
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.170
0.230
-
-
0.361
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 50V, I
D
= 8A,
R
L
= 6.25
, V
GS
12V,
R
GS
= 7.5
-
-
70
ns
Rise Time
-
-
220
ns
Turn-Off Delay Time
-
-
100
ns
Fall Time
-
-
90
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 8A
-
-
64
nC
Gate Charge at 12V
-
33
43
nC
Threshold Gate Charge
-
-
2.4
nC
Gate Charge Source
-
6.5
8.7
nC
Gate Charge Drain
-
17
22
nC
Plateau Voltage
I
D
= 8A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
8
-
V
Input Capacitance
-
800
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
90
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
175
FSL130D, FSL130R
相關PDF資料 |
PDF描述 |
|---|---|
| FSL130R | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL130R1 | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL130R3 | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL130R4 | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0R3 | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSL130D4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| FSL130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL130R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL130R3 | 制造商:International Rectifier 功能描述:FSL130R3 - Rail/Tube |
| FSL130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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