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參數(shù)資料
| 型號： | FSPYE230R4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 83K |
| 代理商： | FSPYE230R4 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
1.2
V
Reverse Recovery Time
-
-
210
ns
μ
C
Reverse Recovery Charge
-
1.4
-
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
100K RAD
300K RAD
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 8A
200
-
200
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
1.5
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
100
nA
μ
A
V
Zero Gate Leakage
(Note 3)
-
25
50
Drain to Source On-State Volts
(Notes 1, 3)
-
1.74
1.92
Drain to Source On Resistance
(Notes 1, 3)
-
0.140
0.155
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
200
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
36
Single Event Effects Safe Operating Area
SEESOA
Br
37
-10
Br
37
36
-15
160
I
60
32
-2
200
I
60
32
-8
160
Au
82
28
0
160
Au
82
28
-5
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typ), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
V
GS
(V)
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
200
240
-4
-8
-12
-16
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
FSPYE230R, FSPYE230F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSPYE234R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| FSPYE234D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPYE234D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234F4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE234R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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