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參數資料
| 型號： | FSS23A0D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數： | 4/8頁 |
| 文件大小： | 56K |
| 代理商： | FSS23A0D1 |
4-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
2
4
6
8
12
10
1
1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1000
100
AREA MAY BE
LIMITED BY r
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
100ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 6A
N
θ
J
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
10
-3
10
-2
10
-1
10
0
10
1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.01
0.02
0.1
0.2
0.5
FSS23A0D, FSS23A0R
相關PDF資料 |
PDF描述 |
|---|---|
| FSS23A0D | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R4 | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0D3 | Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| FSS23A0R1 | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSS23A0D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS23A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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