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參數(shù)資料
型號(hào): FSS23A0D1
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
文件頁數(shù): 6/8頁
文件大小: 56K
代理商: FSS23A0D1
4-6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
T
C
= 25
o
C at Rated I
D
±
25 (Note 7)
μ
A
Drain to Source On Resistance
r
DS(ON)
±
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
V
GS
= 30V, t = 250
μ
s
V
GS
= 30V, t = 250
μ
s
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= 160V, t = 10ms
0.56
A
Unclamped Inductive Switching
I
AS
V
GS(PEAK)
= 15V, L = 0.1mH
27
A
Thermal Response
V
SD
t
H
= 100ms; V
H
= 25V; I
H
= 1A
85
mV
Thermal Impedance
V
SD
t
H
= 500ms; V
H
= 25V; I
H
= 1A
125
mV
FSS23A0D, FSS23A0R
相關(guān)PDF資料
PDF描述
FSS23A0D 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R4 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0D3 Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
FSS23A0R1 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSS23A0D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSS23A0R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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