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參數(shù)資料
| 型號(hào)： | FSU02LG |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | General Purpose GaAs FET |
| 中文描述： | 通用砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 101K |
| 代理商： | FSU02LG |
1
Edition 1.2
July 1999
FSU02LG
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
12
-5
750
-65 to +175
175
Note
V
V
mW
°
C
°
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
AVAILABLE CASE STYLES:
LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
G.C.P.: Gain Compression Point
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
gm
Vp
VGSO
80
-
-0.7
110
100
-1.2
150
-
-1.7
-5
-
-
16.0
17.0
-
-
1.5
-
22.0
23.0
-
VDS = 3V, IDS = 5.4mA
IGS = -5.4
μ
A
VDS = 3V, IDS =54mA
VDS = 3V, VGS = 0V
Channel to Case
VDS = 6V
IDS(DC)
=
80mA
f = 2GHz
VDS = 3V
IDS
=
20mA
f = 2GHz
mA
mS
V
dB
dB
dBm
V
P1dB
G1dB
NF
Associated Gain
-
17.5
-
dB
Gas
Thermal Resistance
-
150
200
°
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
DESCRIPTION
The FSU02LG is a high performance, low noise, GaAs FET designed for
PCS/PCN applications as a driver in the 2GHz band.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 23.0dBm (Typ.)@2GHz
High Associated Gain: G1dB= 17.0dB (Typ.)@2GHz
Low Noise Figure:
NF=1.5dB (Typ.)@f=2GHz
Low Bias Conditions: VDS=3V, 20mA
Cost Effective Hermetic Microstrip Package
Tape and Reel Available
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