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參數(shù)資料
| 型號： | FSYC260D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | FSYC260D |
8
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FSYC260D, FSYC260R
SMD-2
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
A
D
1
E
1
E
2
b
D
2
E
1
2
3
1 - GATE
2 - SOURCE
3 - DRAIN
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.129
0.139
3.27
3.53
-
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D
1
D
2
E
0.435
0.445
11.05
11.30
-
0.115
0.125
2.92
3.17
-
0.685
0.695
17.40
17.65
-
E
1
E
2
0.470
0.480
11.94
12.19
-
0.152
0.162
3.86
4.11
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Revision 2 dated 6-98.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSYC260D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC260D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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