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參數資料
| 型號： | FSYC264D1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 8/8頁 |
| 文件大小： | 48K |
| 代理商： | FSYC264D1 |
8
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ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
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FSYC264D, FSYC264R
SMD-2
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
A
D
1
E
1
E
2
b
D
2
E
1
2
3
1 - GATE
2 - SOURCE
3 - DRAIN
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.129
0.139
3.27
3.53
-
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D
1
D
2
E
0.435
0.445
11.05
11.30
-
0.115
0.125
2.92
3.17
-
0.685
0.695
17.40
17.65
-
E
1
E
2
0.470
0.480
11.94
12.19
-
0.152
0.162
3.86
4.11
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Revision 2 dated 6-98.
相關PDF資料 |
PDF描述 |
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| FSYC264D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYC264D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC264R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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