欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FSYC264R4
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC, SMD2, LCC-3
文件頁數: 1/8頁
文件大小: 48K
代理商: FSYC264R4
1
July 1998
FSYC264D,
FSYC264R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
34A, 250V, r
DS(ON)
= 0.080
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 21nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Formerly available as type TA17668.
Description
The Discrete Products Operation of Intersil has developed a
series
of
Radiation
Hardened
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
MOSFETs
specifically
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety
of
voltage,
current and
Numerous packaging options are also available.
on-resistance ratings.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent
of
MIL-S-19500,
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
or
Space
equivalent
of
Symbol
Package
SMD-2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSYC264D1
10K
TXV
FSYC264D3
100K
Commercial
FSYC264R1
100K
TXV
FSYC264R3
100K
Space
FSYC264R4
D
G
S
File Number
4548
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關PDF資料
PDF描述
FSYC360D Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360R3 CONN MOD 5 POS FEMALE SMD
FSYC360R4 CONN MOD 5 POS FEMALE SMD
相關代理商/技術參數
參數描述
FSYC360D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
主站蜘蛛池模板: 贵南县| 曲靖市| 正宁县| 石嘴山市| 黎城县| 万山特区| 高清| 固原市| 比如县| 石门县| 广灵县| 和静县| 武陟县| 潞城市| 当阳市| 龙井市| 南汇区| 兴和县| 邹城市| 油尖旺区| 扶绥县| 和林格尔县| 乌什县| 临江市| 广德县| 大新县| 康定县| 贺兰县| 偃师市| 南澳县| 宁阳县| 五大连池市| 彭山县| 凤阳县| 定襄县| 安西县| 德江县| 肥城市| 阜新| 青河县| 连城县|