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參數資料
| 型號： | FSYC360R3 |
| 廠商： | Intersil Corporation |
| 英文描述： | CONN MOD 5 POS FEMALE SMD |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 77K |
| 代理商： | FSYC360R3 |
1
FSYC360D, FSYC360R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil Corporation for any desired
deviations from the data sheet.
Formerly available as type TA45206.
Features
21A, 400V, r
DS(ON)
= 0.210
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 35nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Symbol
Packaging
SMD2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSYC360D1
100K
TXV
FSYC360R3
100K
Space
FSYC360R4
D
G
S
Data Sheet
February 2000
File Number
4791
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
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| FSYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYC360R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC9055D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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