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參數(shù)資料
| 型號： | FSYC360R3 |
| 廠商： | Intersil Corporation |
| 英文描述： | CONN MOD 5 POS FEMALE SMD |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | FSYC360R3 |
4
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
00
-10
-15
-20
-25
-5
V
GS
(V)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
300
200
100
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
400
500
V
D
TEMP = 25
o
C
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
10
26
I
D
,
10
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
100
μ
s
100
1000
T
C
= 25
o
C
0.1
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
2.5
PULSE DURATION = 250
μ
s, V
GS
= 12V, I
D
= 13A
FSYC360D, FSYC360R
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| FSYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC360R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC9055D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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