欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FSYC9055R1
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
中文描述: 59 A, 60 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC, LCC-3
文件頁數: 3/8頁
文件大小: 51K
代理商: FSYC9055R1
3
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -48V
V
GS
= -12V, I
D
= 59A
V
GS
= -12V, I
D
= 38A
-60
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-1.79
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.027
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
43
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
20
-60
Br
37
36
10
-60
Br
37
36
15
-48
Br
37
36
20
-36
I
60
31
0
-60
I
60
31
5
-48
I
60
31
10
-36
I
60
31
15
-24
I
60
31
20
-12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 60MeV/mg/cm
2
, RANGE = 31
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
-40
0
0
10
15
20
25
5
V
GS
(V)
V
D
-10
-20
-30
-50
-60
-70
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
μ
1
2
3
1 -
2 -
3 -
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-7
1E-3
FSYC9055D, FSYC9055R
相關PDF資料
PDF描述
FSYC9055R3 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R4 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160R1 RES NET BUSSED 680 OHM 16-SMD
FSYC9160R3 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSYC9055R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9055R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
主站蜘蛛池模板: 陇川县| 十堰市| 八宿县| 哈密市| 定边县| 英山县| 万盛区| 陈巴尔虎旗| 乐山市| 万山特区| 巴里| 永平县| 怀宁县| 柞水县| 峨眉山市| 天峻县| 淄博市| 盘锦市| 沅江市| 包头市| 平和县| 合作市| 确山县| 曲阳县| 清河县| 定兴县| 炉霍县| 东乡县| 牟定县| 疏附县| 九龙坡区| 永新县| 临邑县| 临高县| 永嘉县| 乌兰察布市| 天台县| 卫辉市| 丹巴县| 壤塘县| 沁源县|