- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375948 > FSYC9160R1 (HARRIS SEMICONDUCTOR) RES NET BUSSED 680 OHM 16-SMD PDF資料下載
參數(shù)資料
| 型號： | FSYC9160R1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | RES NET BUSSED 680 OHM 16-SMD |
| 中文描述： | 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 61K |
| 代理商： | FSYC9160R1 |
1
Features
47A, -100V, r
DS(ON)
= 0.053
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 10.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Formerly available as type TA17766.
Description
The Discrete Products Operation of Intersil has developed a
series
of
Radiation
Hardened
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of
voltage, current and
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the Vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent
of
MIL-S-19500,
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
MOSFETs
specifically
on-resistance ratings.
or
Space
equivalent
of
Symbol
Packaging
SMD-2
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSYC9160D1
10K
TXV
FSYC9160D3
100K
Commercial
FSYC9160R1
100K
TXV
FSYC9160R3
100K
Space
FSYC9160R4
G
D
S
July 1998
FSYC9160D,
FSYC9160R
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
File Number
4552
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSYC9160R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC9160R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9260D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260D3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260R1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。