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參數資料
| 型號： | FSYC9160R1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | RES NET BUSSED 680 OHM 16-SMD |
| 中文描述： | 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數： | 7/8頁 |
| 文件大小： | 61K |
| 代理商： | FSYC9160R1 |
7
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FSYC9160D, FSYC9160R
相關PDF資料 |
PDF描述 |
|---|---|
| FSYC9160R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYC9160R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9260D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260D3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
| FSYC9260R1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT |
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