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參數資料
| 型號： | FSYC9055R4 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 59 A, 60 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 8/8頁 |
| 文件大小： | 51K |
| 代理商： | FSYC9055R4 |
8
FSYC9055D, FSYC9055R
SMD-2
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
A
D
1
E
1
E
2
b
D
2
E
1
2
3
1 - GATE
2 - SOURCE
3 - DRAIN
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.129
0.139
3.27
3.53
-
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D
1
D
2
E
0.435
0.445
11.05
11.30
-
0.115
0.125
2.92
3.17
-
0.685
0.695
17.40
17.65
-
E
1
E
2
0.470
0.480
11.94
12.19
-
0.152
0.162
3.86
4.11
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Revision 2 dated 6-98.
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PDF描述 |
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| FSYC9160D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R1 | RES NET BUSSED 680 OHM 16-SMD |
| FSYC9160R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYC9160D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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