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參數資料
| 型號： | FW262 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET |
| 中文描述： | N溝道MOSFET的硅 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | FW262 |
FW262
HD 010528-1/2
Features
Low ON-resistance.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : 000000
FW262
Package Dimensions
unit : mm
0000
[FW262]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
30
±
10
9
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (1000mm
2
0.8mm)
Mounted on a ceramic board (1000mm
2
0.8mm)
52
1.7
2.0
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=9A
ID=9A, VGS=4V
ID=2A, VGS=2.5V
30
V
μ
A
μ
A
V
S
m
m
1
±
10
1.3
0.4
19.5
28
12
14
16
20
Marking : W262 Continued on next page.
Preliminary
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相關代理商/技術參數 |
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| FW-27-01-G-D-230-125 | 制造商:Samtec Inc 功能描述:CONN BD STACKER HDR 54 POS 1.27MM SLDR ST TH - Bulk |
| FW-27-01-G-D-661-065 | 制造商:Samtec Inc 功能描述:CONN BD STACKER HDR 54 POS 1.27MM SLDR ST TH - Bulk |
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