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參數資料
| 型號： | FXT603 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR |
| 中文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 29K |
| 代理商： | FXT603 |
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
*
80 Volt V
CEO
*
Gain of 2K at I
C
=1 Amp
*
P
tot
= 1 Watt
APPLICATIONS
*
Lamp, solenoid and relay drivers
*
Replacement of TO126 and TO220 packages
REFER TO ZTX603 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
100
V
Collector-Emitter Voltage
80
V
Emitter-Base Voltage
10
V
Peak Pulse Current
4
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A, I
E
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=100
μ
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.01
10
μ
A
μ
A
μ
A
μ
A
V
CB
=80V, I
E
=0
V
CB
=80V,
T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
V
EB
=8V, I
C
=0
Colllector-Emitter
Cut-Off Current
I
CES
10
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.0
1.0
V
V
I
C
=0.4A, I
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.8
V
Base-Emitter
Turn-On Voltage
V
BE(on)
1.7
V
IC=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
2000
5000
2000
500
100K
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
I
=100mA, V
CE
=10V
f=20MHz
Transition
Frequency
f
T
150
MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
E-Line
TO92 Compatible
FXT603
3-43
B
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