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參數資料
| 型號： | FZ1200R33KL2C-B5 |
| 廠商： | EUPEC |
| 英文描述： | IGBT-Wechselrichter / IGBT-inverter |
| 中文描述： | IGBT的- Wechselrichter / IGBT的逆變器 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 275K |
| 代理商： | FZ1200R33KL2C-B5 |
1
Technische Information / technical information
FZ1200R33KL2C_B5
IGBT-modules
IGBT-Module
prepared by: Karl-Heinz Hoppe
approved by: Thomas Schütze
date of publication: 2004-4-8
revision: 2.1
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
TY = -25°C
V
3300
3300
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C, TY = 150°C
T = 25°C, TY = 150°C
I òó
I
1200
2300
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
2400
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C, TY = 150°C
Púóú
14,5
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 1200 A, V = 15 V
I = 1200 A, V = 15 V
V ùèú
3,00
3,70
3,65
4,45
V
V
TY = 25°C
TY = 125°C
Gate-Schwellenspannung
gate threshold voltage
I = 120 mA, V = V, TY = 25°C
Vúì
4,2
5,1
6,0
V
Gateladung
gate charge
V = -15 V ... +15 V, V = 1800V
Q
22,0
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
0,42
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
145
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
8,00
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 3300 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V
Róò = 4,7 , C = 330 nF
tá óò
1,00
1,00
μs
μs
TY = 25°C
TY = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V
Róò = 4,7 , C = 330 nF
t
0,40
0,40
μs
μs
TY = 25°C
TY = 125°C
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V
Ró = 4,7 , C = 330 nF
tá ó
3,70
3,90
μs
μs
TY = 25°C
TY = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V
Ró = 4,7 , C = 330 nF
t
0,25
0,35
μs
μs
TY = 25°C
TY = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 1200 A, V = 1800 V, dI/dt = 5400 A/μs
V = ±15 V, L = 60 nH
Róò = 2,0 , C = 330 nF
Eóò
2400
3150
mJ
mJ
TY = 25°C
TY = 125°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 1200 A, V = 1800 V
V = ±15 V, L = 60 nH
Ró = 4,7 , C = 330 nF
Eó
1400
1900
mJ
mJ
TY = 25°C
TY = 125°C
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TY = 125°C, V = 2500 V, Vèà = V -Lù ·di/dt
I
5200
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
8,50 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
9,00
K/kW
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