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參數資料
| 型號： | FZ400R12KS4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module / IGBT-inverter |
| 中文描述： | 510 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-5 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 264K |
| 代理商： | FZ400R12KS4 |
62mm C-Serien Modul mit schnellem IGBT2 für hochfrequentes Schalten
62mm C-series module with the fast IGBT2 for high-frequency switching
1
Technische Information / technical information
FZ400R12KS4
IGBT-modules
IGBT-Module
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2004-7-6
revision: 3.1
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 70°C, TY = 150°C
T = 25°C, TY = 150°C
I òó
I
400
510
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms
I￠
800
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C, TY = 150°C
Púóú
2500
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 400 A, V = 15 V
I = 400 A, V = 15 V
V ùèú
3,20
3,85
3,70
V
V
TY = 25°C
TY = 125°C
Gate-Schwellenspannung
gate threshold voltage
I = 16,0 mA, V = V, TY = 25°C
Vúì
4,5
5,5
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
4,20
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
1,3
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
26,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
1,70
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 400 A, V = 600 V
V = ±15 V
Róò = 2,2
tá óò
0,10
0,11
μs
μs
TY = 25°C
TY = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 400 A, V = 600 V
V = ±15 V
Róò = 2,2
t
0,06
0,07
μs
μs
TY = 25°C
TY = 125°C
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 400 A, V = 600 V
V = ±15 V
Ró = 2,2
tá ó
0,53
0,55
μs
μs
TY = 25°C
TY = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I = 400 A, V = 600 V
V = ±15 V
Ró = 2,2
t
0,03
0,04
μs
μs
TY = 25°C
TY = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 400 A, V = 600 V
V = ±15 V, L = 85 nH
Róò = 2,2
Eóò
38,0
mJ
mJ
TY = 25°C
TY = 125°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 400 A, V = 600 V
V = ±15 V, L = 85 nH
Ró = 2,2
Eó
29,0
mJ
mJ
TY = 25°C
TY = 125°C
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TY = 125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
2600
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,05
K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
0,016
K/W
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