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參數資料
| 型號： | FZT458 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 0.3 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/1頁 |
| 文件大小： | 42K |
| 代理商： | FZT458 |
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FEATURES
*
400 Volt V
CEO
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT558
FZT458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
300
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
I
C
=50mA, V
CE
=10V*
Breakdown Voltages
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
400
V
400
V
5
V
Collector Cut-Off Currents
100
nA
100
nA
Emitter Cut-Off Current
100
nA
Emitter Saturation Voltages
0.2
0.5
V
V
V
BE(sat)
V
BE(on)
0.9
V
Base-Emitter
Turn On Voltage
0.9
V
Static Forward
Current Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
I
=10mA, V
CE
=20V
f=20MHz
Transition Frequency
f
T
50
MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
Switching times
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
FZT458
3 - 187
C
C
E
B
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